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IXFH170N10P
IXFK170N10P
Symbol Test Conditions
(T J = 25°C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-247 (IXFH) Outline
g fs
C iss
V DS = 10V, I D = 0.5 ? I D25 , Note 1
50
72
6000
S
pF
C oss
C rss
V GS = 0V, V DS = 25V, f = 1MHz
2340
730
pF
pF
1
2
3
?P
t d(on)
t r
t d(off)
t f
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 60A
R G = 3.3 Ω (External)
35
50
90
33
ns
ns
ns
ns
e
Q g(on)
198
nC
Terminals:
1 - Gate
3 - Source
2 - Drain
Tab - Drain
Q gs
Q gd
R thJC
R thCS
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
(TO-247)
(TO-264)
39
107
0.21
0.15
nC
nC
0.21 °C/W
°C/W
°C/W
Dim. Millimeter
Min. Max.
A 4.7 5.3
A 1 2.2 2.54
A 2 2.2 2.6
b 1.0 1.4
b 1 1.65 2.13
b 2 2.87 3.12
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
.016 .031
.819 .845
.610 .640
0.205 0.225
Source-Drain Diode
L 19.81 20.32
L1 4.50
.780 .800
.177
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
.140 .144
0.232 0.252
.170 .216
242 BSC
I S
I SM
V SD
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = I S , V GS = 0V, Note 1
170
350
1.5
A
A
V
TO-264 AA ( IXFK) Outline
t rr
I RM
Q RM
I F = 25A, -di/dt = 100A/ μ s,
V R = 50V, V GS = 0V
8.0
0.6
150
ns
A
μ C
Back Side
1 =
2 =
Gate
Drain
3 =
Tab
Source
= Drain
Note 1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min. Max.
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
0.00 0.25
20.32 20.83
2.29 2.59
3.17 3.66
6.07 6.27
8.38 8.69
3.81 4.32
1.78 2.29
6.04 6.30
1.57 1.83
Inches
Min. Max.
.190 .202
.100 .114
.079 .083
.044 .056
.094 .106
.114 .122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800 .820
.090 .102
.125 .144
.239 .247
.330 .342
.150 .170
.070 .090
.238 .248
.062 .072
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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